Product Name: High Thermal Conductivity Ceramic Substrates
Product Material: Aluminum Nitride (AlN)/Silicon Carbide (SiC)
Material Characteristics: High thermal conductivity, excellent thermal shock resistance, electrical insulation, matched CTE with semiconductors, high temperature stability
Application Fields: Power electronic packaging, LED chips, laser devices, microwave circuits, semiconductor modules
Application Industries: Power electronics, semiconductor manufacturing, automotive electronics, aerospace, telecommunications
Processing Challenges: Thin substrate flatness control, via hole precision, metallization adhesion strength, thermal stress management
Processing Flow: Powder preparation → Tape casting → Lamination → High-temperature sintering → Surface grinding → Metallization → Laser processing → Inspection → Packaging
Delivery Time: 25-35 days for standard specifications, 40-50 days for customized designs
High Thermal Conductivity Ceramic Substrates are precision-engineered components specifically designed for applications requiring exceptional thermal management performance, reliable operation in extreme temperature environments, and outstanding thermal shock resistance. Manufactured from advanced ceramic materials including aluminum nitride and silicon carbide, these substrates deliver superior performance in thermal dissipation applications, outperforming traditional materials through their excellent thermal conductivity, electrical insulation properties, and thermal stability.
Key Features:
Exceptional Thermal Conductivity - High thermal conductivity (AlN: 170-200 W/mK, SiC: 120-170 W/mK) provides outstanding heat dissipation performance, ensuring efficient thermal management in high-power density applications and significantly reducing junction temperatures in power electronic devices.
Excellent Thermal Shock Resistance - Withstands rapid temperature changes exceeding 800°C without cracking or delamination, maintaining structural integrity and electrical performance in applications involving frequent thermal cycling and extreme temperature variations.
Superior Electrical Insulation - High volume resistivity (>10¹⁴ Ω·cm) and dielectric strength (15-20 kV/mm) provide reliable electrical isolation while enabling efficient heat transfer, ensuring safe operation in high-voltage power applications and high-frequency circuits.
Matched Thermal Expansion - Low thermal expansion coefficient (AlN: 4.5×10⁻⁶/K, SiC: 4.0×10⁻⁶/K) closely matches that of silicon and other semiconductor materials, minimizing thermal stress at critical interfaces and enhancing reliability in electronic packages.
High Temperature Stability - Withstands continuous operation at temperatures up to 1800°C while maintaining excellent mechanical and thermal properties, suitable for extreme temperature environments in power electronics and high-temperature semiconductor applications.
Precision Surface Quality - Achieves superior surface flatness (<10 μm/in) and fine surface finish (Ra < 0.1 μm), ensuring perfect thermal contact with mounted components and reliable performance in high-frequency electronic applications.
