Product Name:
High-Quality 96% / 99% Aluminum Nitride (AlN) Ceramic Substrate
Product Material:
Aluminum Nitride (AlN) Ceramic, available in 96% or 99% high purity
Material Characteristics:
High thermal conductivity up to 150–200 W/m·K, low thermal expansion coefficient compatible with semiconductor materials, excellent electrical insulation, high temperature stability up to 1800℃, strong chemical inertness, smooth surface finish suitable for precision electronic packaging
Application Fields:
High-power electronic device heat dissipation substrates, LED packaging substrates, semiconductor chip carriers, power modules and microelectronic systems
Application Industries:
Semiconductor manufacturing, LED lighting, power electronics, aerospace electronic systems, communication and electronic engineering
Processing Difficulties:
High material hardness with challenging machining, strict flatness and thickness control, high-temperature sintering with dimensional stability requirements, precision polishing to avoid cracks or surface defects
Processing Flow:
High-purity AlN powder preparation, forming by die pressing or cold isostatic pressing, high-temperature sintering, precision cutting and machining, fine grinding and polishing, dimensional and performance inspection
Delivery Period:
Standard substrates: 15–25 days, customized substrates: 20–35 days
The high-quality 96% / 99% Aluminum Nitride (AlN) ceramic substrate is made from high-purity materials, offering high thermal conductivity, low thermal expansion, and excellent electrical insulation. Designed for high-power electronic devices, LED packaging, and semiconductor modules, it provides smooth, flat surfaces to maximize heat dissipation and reliability in high-temperature precision electronic applications.
Key Features:
Dimensional Accuracy – Tight tolerances (±0.05 mm) on thickness and flatness for precision electronic applications.
